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Original J607 607 TO 263 P Channel MOSFED Field Effect Transistor
DESCRIPTION
The 2SJ607 is P-channel MOS Field Effect Transistor designed
for high current switching applications.
FEATURES
• Super low on-state resistance:
RDS(on)1 = 11 m? MAX. (VGS = ?10 V, ID = ?42 A)
RDS(on)2 = 16 m? MAX. (VGS = ?4.0 V, ID = ?42 A)
• Low input capacitance:
Ciss = 7500 pF TYP. (VDS = ?10 V, VGS = 0 V)
• Built-in gate protection diode
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) VDSS ?60 V
Gate to Source Voltage (VDS = 0 V) VGSS m 20 V
Drain Current (DC) (TC = 25°C) ID(DC) m 83 A
Drain Current (pulse) Note1 ID(pulse) m 332 A
Total Power Dissipation (TC = 25°C) PT 160 W
Total Power Dissipation (TA = 25°C) PT 1.5 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg ?55 to +150 °C
Single Avalanche Current Note2 IAS ?50 A
Single Avalanche Energy Note2 EAS 250 mJ
Models : J607 TO-263 P
Manufacturer : NEC Corporation
Product Categories : Integrated Circuits (ICs), Transistor, MOSFET, MOS Field Effect Transistor
Package/Case : TO-263
Reference To Part : J607 TO-263
Substitute : J607
Package Include :
1 X J607 TO-263 P
Perum Puri Astapada Indah 2 Rt:08 Rw.03 Blok K No:6
Plosogeneng Kec .Jombang, Kab.Jombang, Jawa Timur 61416
Hp. 0813-3278-7811 Kantor 0321-852845
Hp. 0813-3278-7811 Kantor 0321-852845
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