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Channel IR Power MOSFET 540 IRF540N IRF540NPBF TO 220
Features :
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating 175°C
Operating Temperature
Fast Switching Fully
Avalanche Rated
Lead-Free
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 130 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 33 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 71 nC
Rise Time (tr): 35 nS
Drain-Source Capacitance (Cd): 250 pF
Maximum Drain-Source On-State Resistance (Rds): 0.044 Ohm
Package: TO-220AB
Perum Puri Astapada Indah 2 Rt:08 Rw.03 Blok K No:6
Plosogeneng Kec .Jombang, Kab.Jombang, Jawa Timur 61416
Hp. 0813-3278-7811 Kantor 0321-852845
Hp. 0813-3278-7811 Kantor 0321-852845
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