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MOSFET 76419D 76419 HUF76419D3S TO252 N -Channel
Automotive Engine Computer Vulnerable Repair Chip SMD Transistor Automotive IC
Features
Ultra Low On-Resistance
rDS(ON) = 0.037?, VGS = 10V
rDS(ON) = 0.043?, VGS = 5V
Simulation Models
Temperature Compensated PSPICE® and SABER™
Electrical Models Spice and SABER Thermal Impedance Models Peak Current vs Pulse Width CurveUIS Rating Curve Switching Time vs RGS Curves
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 75 W
Maximum Drain-Source Voltage |Vds|: 60 V
Maximum Gate-Source Voltage |Vgs|: 16 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V
Maximum Drain Current |Id|: 20 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 23 nC
Rise Time (tr): 35 nS
Drain-Source Capacitance (Cd): 250 pF
Maximum Drain-Source On-State Resistance (Rds): 0.037 Ohm
Models : HUF76419D3ST
Manufacturer : Fairchildsemi
Product Categories : Integrated Circuits (ICs)
Package/Case : TO252
Reference To Part : HUF76419D3ST
Substitute : HUF76419D3ST
Package Include :
1 X HUF76419D3ST
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